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Online ISSN: 2578-3769


The influence of excimer laser performance on lithography
Authors: Yihua Zhu, aifei, Yayi WEI
Institution:Institute of Microelectronics of Chinese Academy of Sciences
Keywords:excimer laser light source;lithography;energy and dose;wavelength and bandwidth
Volume 5, Issue 1: 100-107, 2024 | PDF
Published: Feb. 2, 2024
Abstract: The excimer laser light source can bring smaller image resolution and more uniform exposure pattern to the lithography machine. At present, excimer lasers have been used in 7 nm lithography process...
Sample Manuscript Showing Style and Formatting Specifications for JoMM
Authors: Ai Fei
Institution:University of Chinese Academy of Sciences, Beijing 100049
Keywords:JoMM;microelectronic manufacturing;journal;templates
Volume 5, Issue 1: 1, 2024 | PDF
Published: Jan. 5, 2024
Abstract: This paragraph shows the required format and appearance of a manuscript prepared for JoMM. The abstract is a concise (short and clear) summary. It should clearly state the problem, the methods, the...
Influence of Parameters in the Design of a Faceted Structure for Incoherent Beam Shaping
Authors: Lihong Liu, Thierry Engel, Huwen Ding et al.
Institution:Institute of Microelectronics, Chinese Academy of Sciences, Beijing
Keywords:Incoherent beam shaping;micro lens array;custom optimization
Volume 4, Issue 4: 21040401, 2021 | PDF
Research Article
Published: Dec. 31, 2021
Abstract: A reflective faceted structure is proposed to reshaping an incoherent light beam into two focalized spots. To obtain the desired irradiance distribution on a detector, custom optimization function ...
A Novel R2R Control Strategy with Virtual Structure Deployment and Rolling Wave Control Plan
Authors: Chang Xu
Institution:Fujian Jinhua Integrated Circuit Co, ., Ltd, ., Jinjiang, Quanzhou, Fujian
Keywords:R2R;manufacturing;control;circuit design;virtual metrology
Volume 4, Issue 3, 2021 | PDF
Research Article
Published: Sept. 18, 2021
Abstract: This paper presents an innovative R2R (run to run) control strategy. This novel approach has made use of circuit design structure through virtually put up the structure before reach the actual stru...
Improvement of Environment Stability of an i-Line Chemically Amplified Photoresist
Authors: Haibo Li, Qian Yang, Jia Sun et al.
Keywords:Chemical amplification;thick film;i-Line;environment stability;Poly (p-hydroxyl styrene);PAB;PEB
Volume 4, Issue 2: 21040201, 2021 | PDF
Research Article
Abstract: An i-Line chemically amplified (ICA) thick film positive resist is reported in this paper. The impact of process conditions on photoresist performance was investigated. Pre-apply bake temperature a...
Patterning with Organized Molecules
Authors: Mark Neisser
Institution:Tan Kah Kee Innovation Laboratory
Keywords:Stochastics;Self-assembly;overlay;edge placement error;self-organizing;DNA origami;bottle brush polymers
Volume 4, Issue 2: 21040202, 2021 | PDF
Research Article
Published: Aug. 9, 2021
Abstract: Decades of progress in the semiconductor industry has led to lithographically printed dimensions that are small enough that the positions of individual molecules and the stochastic variation in the...
New Progress of China's Integrated Circuit Design Industry
Volume 4, Issue 2: 21040203, 2021 | PDF
Research Article
Published: June 30, 2021
Abstract: China's IC industry has been flourishing in recent years, huge market demand together with government investments are the major driving forces for this development. The status and development momen...
Nano-Electronic Simulation Software (NESS): A Novel Open-Source TCAD Simulation Environment
Authors: Cristina Medina-Bailon, Tapas Dutta, Fikru Adamu-Lema et al.
Institution:Device Modelling Group, James Watt School of Engineering, University of Glasgow
Keywords:Integrated Simulation Environment;Variability;Drift-Diffusion;Quantum Correction;Kubo-Greenwood;Non-Equilibrium Green’s Function
Volume 3, Issue 4: 20030404, 2020 | PDF
Research Article
Published: Dec. 30, 2020
Abstract: This paper presents the latest status of the open source advanced TCAD simulator called Nano-Electronic Simulation Software (NESS) which is currently under development at the Device Modeling Group ...
First-principles Simulations of Tunneling FETs Based on van der Waals MoTe2/SnS2 Heterojunctions with Gate-to-drain Overlap Design
Authors: Kun Luo, Kui Gong, Jiangchai Chen et al.
Institution:Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences
Keywords:2D materials heterojunction;tunnel-FET;gate-to-drain overlap;DFT-NEGF
Volume 3, Issue 4: 20030405, 2020 | PDF
Research Article
Published: Dec. 30, 2020
Abstract: The electronic properties and transport properties of MoTe2/SnS2 heterostructure Tunneling FETs are investigated by the density functional theory coupled with non-equilibrium ...
Material Modeling in Semiconductor Process Applications
Authors: Boris A. Voinov, Patrick H. Keys, Stephen M. Cea et al.
Institution:Logic Technology Development, Intel Corporation, Hillsboro OR
Keywords:TCAD;atomistic modeling;density functional theory;molecular dynamics;kinetic Monte Carlo
Volume 3, Issue 4: 20030406, 2020 | PDF
Research Article
Published: Dec. 30, 2020
Abstract: During the past decade, significant progress has been achieved in the application of material modeling to aid technology development in semiconductor manufacturing companies such as Intel. In this ...