Authors: Man Gu, Wenjun Li, Haiting Wang et al.
Institution：GLOBALFOUNDRIES Inc. US
Keywords：FinFET performance；parasitic resistance and capacitance；source/drain cavity；cavity implant
doi：10.33079/jomm.20030201
Issue 2: 20030201, 2020
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Published: June 8, 2020
Views：3190
Abstract：
Fin field-effect transistor (FinFET) technology has been introduced to the mainstream complementary metal-oxide semiconductor (CMOS) manufacturing for low-power and high-performance applications. H...
Authors: ChoongHyun Lee
Institution：Zhejiang University
Keywords：High-pressure oxidation；Ge oxidation；High mobility channel；Ge/GeO
2 interface；Interface trap density
doi：10.33079/jomm.20030202
Issue 2: 20030202, 2020
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Published: June 29, 2020
Views：2287
Abstract：
On the basis of thermodynamic and kinetic consideration of Ge-O system, high-pressure oxidation (HPO) on Ge was proposed to suppress the GeO desorption during the thermal oxidation and significant ...
Authors: Litho World
doi：10.33079/jomm.20030203
Abstract：
China's IC industry has been flourishing in recent years, huge market demand together with government investments are the major driving forces for this development. The status and development momen...
